High quality oxide films on substrates

Details High quality oxide films on substrates High quality oxide films on substrates

1992-11-12

1994-02-01

Fourson, George

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

148DIG118, H01L 2902

Patent

active

052829030

ABSTRACT:
A method for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material.

REFERENCES:
patent: 4592927 (1986-06-01), Stall
patent: 4686112 (1987-08-01), Hoffman
patent: 4770901 (1988-09-01), Katoh et al.
patent: 4888203 (1989-12-01), Rothschild et al.
Gao, Y. et al, "Growth of Al oxide layers . . . condensed Molecular Oxygen" J. Appl. Phys. 67(11), Jun. 1, 1990, pp. 7148-7149.
Qiu, S. et al, "The Formation of Metal-Oxygen Species at Low Temperatures", J. Vac. Sci. Tech., vol. A8 pp. 2595-2598.
Wolf, S. et al, Silicon Processing for the VLXI Era: vol. 1, Lattice Press, 1986 pp. 182-185.

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