Graded compositions of II-VI semiconductors and devices utilizin

Details Graded compositions of II-VI semiconductors and devices utilizin Graded compositions of II-VI semiconductors and devices utilizin

1995-08-29

1998-07-21

Kunemund, Robert

Metal treatment

Barrier layer stock material, p-n type

With contiguous layer doped to degeneracy

148 332, 148 333, 117 89, 117 92, 117105, 438288, C30B 2949

Patent

active

057829969

ABSTRACT:
A graded layer composition of Zn(Se,Te) in which the Te fraction varies across the layer in a super-parabolic grading profile. Such a graded layer has lower contact resistance than graded layers in which the Te fraction varies in a linear or parabolic grading profile. Such low contact resistance makes such graded layers useful in forming ohmic contacts for II-VI semiconductor lasers and light emitting diodes.

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