Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
Patent
1979-10-05
1981-06-16
Rutledge, L. Dewayne
Metal treatment
Barrier layer stock material, p-n type
With non-semiconductive coating thereon
136258, 136260, 148174, 148175, 148 33, 357 15, 357 52, 357 61, 427 82, 427 84, 427 85, 427 88, 428620, H01L 3104, H01L 21306
Patent
active
042735947
ABSTRACT:
Semiconductor devices using chemically treated n-type GaAs have greatly reduced surface recombination velocities. A preferred embodiment uses fractional monolayers of ruthenium on the GaAs surface.
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Heller Adam
Leamy Harry J.
Miller Barry
Nelson Ronald J.
Parkinson Bruce A.
Bell Telephone Laboratories Incorporated
Laumann Richard D.
Rutledge L. Dewayne
Saba W. G.
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