Group III-V compound crystal article using selective epitaxial g

Details Group III-V compound crystal article using selective epitaxial g Group III-V compound crystal article using selective epitaxial g

1992-12-04

1994-01-25

Kunemund, Robert

Metal treatment

Barrier layer stock material, p-n type

With recess, void, dislocation, grain boundaries or channel...

148DIG26, 148 333, 437 83, 437 89, 437110, H01L 2120

Patent

active

052812839

ABSTRACT:
A III-V group compound crystal article comprises a substrate having a non-nucleation surface with smaller nucleation density (S.sub.NDS) and a nucleation surface (S.sub.NDL) which is arranged adjacent to said non-nucleation surface (S.sub.NDS), has a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and is comprised of an amorphous material, and a III-V group compound monocrystal grown from said single nucleus on said substrate and spread on said non-nucleation surface (S.sub.NDS) beyond said nucleation surface (S.sub.NDL).

REFERENCES:
patent: 3620833 (1971-11-01), Gleim
patent: 3764409 (1973-10-01), Nomura et al.
patent: 3885061 (1975-05-01), Corboy et al.
patent: 4131496 (1978-12-01), Weitzel et al.
patent: 4174422 (1979-11-01), Matthews et al.
patent: 4279688 (1981-07-01), Abrahams et al.
patent: 4467521 (1984-08-01), Spooner et al.
patent: 4470192 (1984-09-01), Miller
patent: 4479847 (1984-10-01), McCaldin et al.
patent: 4549926 (1985-10-01), Corboy et al.
patent: 4551394 (1985-11-01), Betsch et al.
patent: 4587717 (1986-05-01), Daniele et al.
patent: 4657603 (1987-04-01), Kruehler et al.
patent: 4816420 (1989-03-01), Bozler et al.
Chen et al, "Embedded Epitaxial Growth . . . " Applied Physics Letters, 38(5), Mar. 1, 1981, pp. 301-303.
J. Cr. Growth, 77 (1986), pp. 297-302, Kamon et al.
Br. J. Appl. Phys. (1967) vol. 18, p. 1380, Filby et al.
Appl. Phys. Ltrs., 48, (1986) Jan., No. 2, Hong et al.
J. Appl. Phys. 58 (1985) Oct., No. 7, Oku et al.

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