Growth of GaN layers on quartz substrates

Details Growth of GaN layers on quartz substrates Growth of GaN layers on quartz substrates

1998-09-02

2000-03-07

Chaudhari, Chandra

Metal treatment

Barrier layer stock material, p-n type

With contiguous layers of different semiconductive material

148 335, 117952, 438 46, 438507, 438967, H01L 2120

Patent

active

060334908

ABSTRACT:
In a method of manufacturing a semiconductor device which includes a quartz substrate having a z-cut plane of (0001) plane on a surface, a GaN film is first deposited on the surface. Finally, the quartz substrate is removed from the GaN film. The removed GaN film is used as a real substrate for forming GaN based compound semiconductor layers thereon.

REFERENCES:
Zhou et al., "Growth of GaN films by combined laser and microwave plasma enhanced chemical vapor deposition", Journal of Crystal Growth, vol. 151, pp. 249-253, Jun. 1995.
Naniwae, et al., "Growth of Single Crystal GaN Substrate Using Hydride Vapor Phase Epitaxy" Journal of Crystal Growth 99 (1990) pp. 381-384.
Gotz, et al., "Electronic and Structural Properties of GaN Grown by Hydride Vapor Phase Epitaxy", Appl. Phys. Lett. 69 (2), Jul. 8, 1996, pp. 242-244.

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