Gallium arsenide phosphide mixed crystal epitaxial wafer with a

Details Gallium arsenide phosphide mixed crystal epitaxial wafer with a Gallium arsenide phosphide mixed crystal epitaxial wafer with a

1987-11-18

1989-09-12

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

148 334, 148DIG41, 148DIG56, 148DIG67, 148DIG72, 148DIG97, 156610, 357 17, 437126, 437127, 437128, 437133, 437905, 437169, H01L 3300, H01L 2120

Patent

active

048656550

ABSTRACT:
An epitaxial wafer for producing arrays of GaAsP-LEDs comprises, in the GaAs.sub.1-x P.sub.x layer with varying X, a layer region(s) with a discontinuous variance of x along the thickness of the GaAs.sub.1-x P.sub.x layer. This layer region(s) contribute to a uniformity in the brightness of the light emission of LEDs formed in the epitaxial wafer.

REFERENCES:
patent: 3867202 (1975-02-01), Ichiki et al.
patent: 3963538 (1976-06-01), Broadie et al.
patent: 3963539 (1976-06-01), Kemlage et al.
patent: 4252576 (1981-02-01), Hasegawa et al.
patent: 4378259 (1983-03-01), Hasegawa et al.
patent: 4438446 (1984-03-01), Tsang
patent: 4495514 (1985-01-01), Lawrence et al.
patent: 4510515 (1985-04-01), Kajita et al.
patent: 4561915 (1985-12-01), Mito
patent: 4616241 (1986-10-01), Biefeld et al.
DE-Z: Siemens Forschungs-u. Entwicklungs-berichte, 3, 1974, pp. 55-60 (Huber et al.).

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