Gettering

Details Gettering Gettering

1985-04-04

1986-08-26

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

148 333, 148DIG60, 29571, 56DIG66, H01L 21324

Patent

active

046080953

ABSTRACT:
Semiconductor substrate materials, such as silicon, useful in the manufacture of electronic devices, such as integrated circuits, employing low temperature, i.e., below 1025.degree. C. processing cycles are provided with a 0.05 to 2.0 micron thick layer of polysilicon on the backside to improve gettering capabilities of defects, contaminants and impurities away from the active device region of the substrate.

REFERENCES:
patent: 4053335 (1977-10-01), Hu
Craven et al, "Internal Gettering in Silicon", Solid State Technology, Jul. 1981, pp. 55-61.

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