High temperature layered silicon structures

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...

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29576C, 29580, 29589, 29610SG, 148 333, 148 334, 148188, 148DIG12, 148DIG159, 148DIG168, 338 2, 338 4, 357 26, H01L 2984, H01L 21225

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045239649

ABSTRACT:
The invention relates to a process for producing silicon diaphragm pressure transducers, and to pressure transducers so produced, which will operate in high temperature applications above 150.degree. C. by properly insulating the strain gauges from the diaphragm. This is achieved by utilizing two properly oriented silicon wafers which are joined together by a two-step diffusion technique, which includes the diffusion bonding of one boron doped wafer surface into the other wafer surface previously oxide coated, at greatly reduced pressures and temperatures than heretofore used. This simultaneous diffusion takes place because of prior contouring or the forming of relief channels into one of the bonded surfaces, and because only one joined surface is oxide coated, thus reducing process times substantially. That is, there is a continuous diffusion of boron into the boron oxide coated surface resulting in a boron rich layer of great uniformity. The process includes a mechanical lapping and selective etching which leaves the extraordinarily level boron rich surface which is very uniform and ready for processing and connection into other transducer parts. The invention is particularly advantageous in the ease of fabrication which reduces the cost of the final transducer.

REFERENCES:
patent: 3900811 (1975-08-01), Kurtz et al.
patent: 3922705 (1975-11-01), Yerman
patent: 4016644 (1977-04-01), Kurtz
patent: 4065970 (1978-01-01), Wilner
patent: 4121334 (1978-10-01), Wallis
patent: 4291293 (1981-09-01), Yamada et al.
Vick, G. L., "High-Temperature Solid-State Pressure Transducer" Technical Report AFFDL-TR-70-163, Dec. 1970.

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