Glass passivated gold diffused rectifier pellet and method for m

Details Glass passivated gold diffused rectifier pellet and method for m Glass passivated gold diffused rectifier pellet and method for m

1977-09-12

1979-04-10

Ozaki, G.

Metal treatment

Barrier layer stock material, p-n type

Having at least three contiguous layers of semiconductive...

148187, 29580, 357 37, H01L 21225, H01L 2916

Patent

active

041486722

ABSTRACT:
Disclosed is a rectifier pellet and a method for the fabrication thereof. A layer of oxide is grown on a semiconductor wafer that has been diffused to form a plurality of rectifier pellets, and openings are etched in the oxide at locations corresponding to each pellet. Gold is diffused through the openings into a preselected distribution to reduce turnoff time. Grooves are etched to facilitate glass passivation and division of the wafer into pellets.

REFERENCES:
patent: 3617398 (1971-11-01), Bilous et al.
patent: 3941625 (1976-03-01), Kennedy et al.
patent: 3943013 (1976-03-01), Kennedy et al.
patent: 3972113 (1976-08-01), Nakata et al.
patent: 4061510 (1977-12-01), Kennedy et al.
patent: 4066484 (1978-01-01), Moyson

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