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Defect free trench isolation devices and method of fabrication

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Device for patterned films

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Reexamination Certificate

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Electrically insulated silicon structure and producing method th

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Epitaxial tunnels from intersecting growth planes

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Epitaxially grown compound-semiconductor crystal

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Fabrication of defect free silicon on an insulating substrate

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Floating single crystal thin film fabrication method

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Gallium arsenide on sapphire heterostructure

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Gettering technique for silicon-on-insulator wafers

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Group III-V compound crystal article using selective epitaxial g

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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High temperature layered silicon structures

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Lightly doped polycrystalline silicon resistor having a non-nega

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Low defect, high purity crystalline layers grown by selective de

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Mask material for low temperature selective growth of silicon or

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Method for heat-treating gallium arsenide monocrystals

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Preparing substrates by annealing epitaxial layers in the form o

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Reusable substrate for thin film separation

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Semiconductor structure for recessed isolation oxide

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Semiconductor structures and methods for manufacturing such stru

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Semiconductor substrate and method of making same

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