4. Metal treatment
  5. Barrier layer stock material, p-n type
  6. With recess, void, dislocation, grain boundaries or channel...
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Gallium arsenide on sapphire heterostructure

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Patent

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Gettering technique for silicon-on-insulator wafers

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Patent

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Group III-V compound crystal article using selective epitaxial g

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Patent

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