Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Patent
1998-05-29
2000-03-07
Chang, Joni
Metal treatment
Barrier layer stock material, p-n type
With recess, void, dislocation, grain boundaries or channel...
148 332, 148 334, 428620, H01L 21302
Patent
active
060334894
ABSTRACT:
A semiconductor substrate is provided that exhibits very low substrate resistance while also providing structural integrity and robustness to resist breakage during manufacturing. The invention also provides methods of making these semiconductor substrates. The semiconductor substrate includes a planar surface and a recess extending below the planar surface. Preferred substrates include a plurality of recesses arranged in an array.
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Marchant Bruce Douglas
Sapp Steven
Welch Thomas
Atwood Pierce
Caseiro Chris A.
Chang Joni
Fairchild Semiconductor Corp.
Leber Celia H.
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