Defect free trench isolation devices and method of fabrication

Details Defect free trench isolation devices and method of fabrication Defect free trench isolation devices and method of fabrication

1990-03-15

1991-01-08

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

With recess, void, dislocation, grain boundaries or channel...

148DIG50, 357 47, H01L 2930, H01L 2702

Patent

active

049832263

ABSTRACT:
The specification discloses an isolation trench (36) formed in a semiconductor body. A stress relief layer (38) of oxide is formed on the interior walls of the trench (36), the layer (38) being sufficiently thin to prevent stressing of the lower corners of the trench (36). A masking layer (40) of nitride is formed over the layer (38). An isolation body (42) of oxide or polysilicon then refills the remainder of the trench and a cap oxide (43) and layer (44) of field oxide is formed over the semiconductor body and the filled trench.

REFERENCES:
patent: 3500139 (1970-03-01), Frouin
patent: 4079506 (1978-03-01), Suzuki et al.
patent: 4396460 (1983-08-01), Tamaki et al.
patent: 4528047 (1985-07-01), Beyer et al.
patent: 4563227 (1986-01-01), Sakai et al.
patent: 4582565 (1986-04-01), Kawakatzu
"Trench Filling Process", IBM TDB, vol. 28, No. 6, Nov. 85, pp. 2583-2584.

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