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Semiconductor arrangement made of compound semiconductor materia

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – For compound semiconductor
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Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
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Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – For compound semiconductor
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Semiconductor device and its manufacturing method

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – Deep level dopant
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Semiconductor device and manufacturing method for the same

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – Deep level dopant
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Semiconductor device and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – Deep level dopant
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Semiconductor device and method of fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – Deep level dopant
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Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
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Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – Deep level dopant
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Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – Deep level dopant
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Semiconductor device and method of producing the same

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
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Semiconductor device comprises an impurity layer having boron io

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
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Semiconductor device having a metal-semiconductor junction...

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
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Semiconductor device having an extrinsic gettering film

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – Deep level dopant
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Semiconductor device having an isolation region enriched in oxyg

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
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Semiconductor device having buried boron and carbon regions

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
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Semiconductor device having buried boron and carbon regions,...

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
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Semiconductor device having improved electronic isolation

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – For compound semiconductor
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Semiconductor device having MOS transistor

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
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Semiconductor device with a short-lifetime region and...

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – Deep level dopant
Reexamination Certificate

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