Semiconductor device

Details Semiconductor device Semiconductor device

1996-11-15

1999-02-23

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

257655, 257914, H01L 29167, H01L 29207, H01L 29227, H01L 310288

Patent

active

058747729

ABSTRACT:
A semiconductor device is obtained in which initial breakdown voltage of an insulating film is improved. On a silicon substrate, an insulating film is provided which is not more than 100 .ANG. in thickness. An electrode is provided on the silicon substrate, with the insulating film positioned therebetween. Oxygen concentration in the substrate is set to be not more than 1.times.10.sup.18 atoms/cm.sup.3 by old ASTM value.

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