Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – For compound semiconductor
Patent
1990-09-12
1995-06-06
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
For compound semiconductor
257 12, 257183, 257191, 257607, H01L 29167, H01L 29207, H01L 29227
Patent
active
054227313
ABSTRACT:
The invention relates to a semiconductor arrangement made of compound semiconductor material and consists in that the semiconductor body contains in areas and, in the case of phosphide compounds throughout its entirety or in areas, isoelectronic impurities made of an element whose covalent atom radius is larger than that of the element of the compound semiconductor, which the impurity material is isoelectronic.
REFERENCES:
patent: 3958143 (1976-05-01), Bell
patent: 3982261 (1976-09-01), Antypas
patent: 4237471 (1980-12-01), Pommerrenig
patent: 4450463 (1984-05-01), Chin
patent: 4584174 (1986-04-01), Morioka et al.
Norieka, A. J., et al. "Indium Antimonide-bismuth Compositions Grown by Molecular Beam Epitaxy" J. Appl. Phys. 53(7) Jul., 1982, pp. 4932-4937.
Forrest, S. R., et al. "An n-In(0.53)Ga(0.47)As
-InP Rectifier" J. Appl. Phys. 52(9) Sep. 1981, pp. 5838-5842.
G. Jacob, "How to Decrease Defect Densities in LEC-SI GaAs and InP Crystals", Semi-insulating III-V Materials, Evian (1982), Shiva Publications, Ltd., Northwick, Cheshire, England, pp. 2-17.
M. Duseaux et al, "Growth and Characteization of Large Dislocation-Free GaAs Crystals for Integrated Circuits Applications", Semi-Insulating III-V Materials, Kah-neeta (1984), Shiva Publications, Ltd., Nautwick, Cheshire, England, pp. 118-125.
H. M. Hobgood et al, "Large Diameter, Low Dislocation In-Doped GaAs: Growth, Characterization and Implications for FET Fabrication", Semi-Insulating III-V Materials, Kah-neeta (1984), Shiva Publications, Ltd., Nautwick, Cheshire, England, pp. 149-156.
H. V. Winston et al. "FET Arrays on In-Alloywed GaAs Substrates", Semi-insulating III-V Materials, Kah-neeta (1984), Shiva Publications, Ltd., Nautwick, Cheshire, England, pp. 402-405.
Crane Sara W.
TEMIC Telefunken microelectronic GmbH
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