Semiconductor device

Details Semiconductor device Semiconductor device

1992-07-15

1993-07-20

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

For compound semiconductor

257611, 257612, 257472, 257475, 437 81, H01L 29167, H01L 2120

Patent

active

052296377

ABSTRACT:
In a semiconductor device constituting a GaAs MESFET, a GaAs substrate is prepared from a base material containing boron ions as a dopant impurity having a total impurity concentration of 2.times.10.sup.17 atoms/cm.sup.3 or more. The boron ions are introduced into the GaAs substrate during crystal growth so that a uniform distribution of boron ions in the substrate results. Electrode layers are formed at predetermined portions on the GaAs substrate, and an active layer is formed to be adjacent to the electrode layers by ion implantation. Source and drain electrodes are formed on the electrode layers respectively, and a gate electrode is formed on the active layer.

REFERENCES:
patent: 4602965 (1986-07-01), McNally
patent: 4670176 (1987-06-01), Morioka et al.
patent: 4905061 (1990-02-01), Ohmuro et al.
patent: 5153703 (1992-10-01), Suga et al.
Miller et al., "Mechanisms for Low-Frequency Oscillations in GaAs," IEEE Transactions on Electron Devices, vol. ED-34, No. 6, Jun. 1987, pp. 1239-1244.

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