Semiconductor device and method of producing the same

Details Semiconductor device and method of producing the same Semiconductor device and method of producing the same

1994-12-16

1996-11-12

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

257219, 257655, 257928, H01L 29167, H01L 29207, H01L 29227, H01L 310288

Patent

active

055743072

ABSTRACT:
A semiconductor apparatus has a silicon substrate sliced off from a silicon ingot produced by the pulling method or floating zone method, wherein the concentration of interstitial oxygen in a region with a depth of approximately 10 .mu.m or less from a device forming surface is minimum except for the device forming surface. According to the present invention, in the semiconductor apparatus production process, in the inner region with a depth of approximately 10 .mu.m from the device forming surface of the silicon substrate, the inner region affecting the device operation, oxygen does not precipitate. Moreover, in a more inner region, oxygen precipitates, thereby providing a gettering effect with respect to metal impurities.

REFERENCES:
patent: 4505759 (1985-03-01), O'Mara
patent: 4548654 (1985-10-01), Tobin
patent: 4851358 (1989-07-01), Huber
patent: 5159429 (1992-10-01), Bendernagel et al.
patent: 5198881 (1993-03-01), Huang et al.
Matsushita et al., Toshiba Gijutsu Kokai Shu, vol. 7-54, No. 89-8660, p. 93 (Sep. 28, 1989).

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