Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – Deep level dopant
Patent
1998-08-28
1999-08-17
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
Deep level dopant
257617, 257913, 438471, H01L 2924, H01L 2932, H01L 2936
Patent
active
059397705
ABSTRACT:
A denuded zone DZ least liable to generate defects is formed in a surface layer zone 12 of a semiconductor wafer 10. In an inner layer zone 18 of the semiconductor wafer 10, micro defects BMD for gettering of impurity metal are made. In the inner layer zone 18, the precipitation of oxygen decreases with the depth. As a result, mechanical strength can be maintained while improving the gettering performance of impurity metal.
REFERENCES:
patent: 4608095 (1986-08-01), Hill
patent: 5327007 (1994-07-01), Imura et al.
patent: 5355831 (1994-10-01), Schauer
patent: 5401669 (1995-03-01), Falster et al.
patent: 5403406 (1995-04-01), Falster et al.
patent: 5502010 (1996-03-01), Nadahara et al.
patent: 5514897 (1996-05-01), Nakato
patent: 5674756 (1997-10-01), Satoh et al.
patent: 5698891 (1997-12-01), Tomita et al.
Hardy David B.
Kabushiki Kaisha Toshiba
LandOfFree
Semiconductor device and its manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and its manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and its manufacturing method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-317212