Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
Patent
1995-02-23
1997-01-28
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
257 66, 257655, H01L 29167, H01L 29307, H01L 29227
Patent
active
055980252
ABSTRACT:
An impurity diffusion layer shallow in diffusion depth and high in activity is formed in a semiconductor device. In the semiconductor device, clusters of icosahedron structure each composed of boron atoms are formed in the silicon crystal of the impurity layer of the semiconductor device so as to function as acceptors. Further, after the clusters of icosahedron structure each composed of 12 boron atoms have been formed by implanting boron ions at high concentration, the device is processed at temperature lower than 700.degree. C. to prevent the boron from being decreased due to combination with silicon. Since an impurity layer shallow in diffusion from the substrate surface and high in activity can be formed and further the clusters of icosahedron structure each composed of 12 boron atoms can be utilized as acceptors, it is possible to realize a high doping even in the manufacturing process for the devices not suitable for high temperature annealing.
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Mizushima Ichiro
Murakoshi Atsushi
Watanabe Masaharu
Yoshiki Masahiko
Kabushiki Kaisha Toshiba
Ngo Ngan V.
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