Semiconductor device comprises an impurity layer having boron io

Details Semiconductor device comprises an impurity layer having boron io Semiconductor device comprises an impurity layer having boron io

1995-02-23

1997-01-28

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

257 66, 257655, H01L 29167, H01L 29307, H01L 29227

Patent

active

055980252

ABSTRACT:
An impurity diffusion layer shallow in diffusion depth and high in activity is formed in a semiconductor device. In the semiconductor device, clusters of icosahedron structure each composed of boron atoms are formed in the silicon crystal of the impurity layer of the semiconductor device so as to function as acceptors. Further, after the clusters of icosahedron structure each composed of 12 boron atoms have been formed by implanting boron ions at high concentration, the device is processed at temperature lower than 700.degree. C. to prevent the boron from being decreased due to combination with silicon. Since an impurity layer shallow in diffusion from the substrate surface and high in activity can be formed and further the clusters of icosahedron structure each composed of 12 boron atoms can be utilized as acceptors, it is possible to realize a high doping even in the manufacturing process for the devices not suitable for high temperature annealing.

REFERENCES:
patent: 4216030 (1980-08-01), Graul
patent: 4329773 (1982-05-01), Geipel, Jr. et al.
patent: 4732866 (1988-03-01), Chruma et al.
patent: 4968634 (1990-11-01), Kuhlmann
patent: 5108954 (1992-04-01), Sandhu
patent: 5178980 (1993-01-01), Mort et al.
patent: 5213986 (1993-05-01), Pinker et al.
D. W. Bullet, "The Electronic Origin Of Disorder In Boron And Boron-Rich Borides", AIP Conference Proceedings 231, AIP, New York 1991.
Y. Sato et al., Extended Abstracts for the 29th Spring Meeting, Apr. 3, 1982, 3p-Q-14, The Japan Society Of Applied Physics And Related Societies.
S. Ghandi, "VLIS Fabrication Principles", 1983, pp. 325-328.

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