Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-04-18

2006-04-18

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

C257S344000, C257S376000, C257S607000, C257S611000, C257S612000, C257S655000, C257S917000, C438S301000, C438S305000, C438S306000, C438S307000, C438S529000

Reexamination Certificate

active

07030464

ABSTRACT:
A technology of restraining junction leakage in a semiconductor device is to be provided. There is provided a semiconductor device provided with a semiconductor substrate, a gate electrode9formed on the semiconductor substrate, and a source/drain region formed beside the gate electrode, wherein the source/drain region4comprises a first impurity diffusion region including a first P-type impurity and located in the proximity of a surface of the semiconductor substrate, and a second P-type impurity diffusion region located below the first impurity diffusion region and including a second P-type impurity having a smaller diffusion coefficient in the semiconductor substrate than the first P-type impurity.

REFERENCES:
patent: 5821147 (1998-10-01), Kizilyalli
patent: 6063682 (2000-05-01), Sultan et al.
patent: 6165858 (2000-12-01), Gardner et al.
patent: 6706582 (2004-03-01), Yanagida et al.
patent: 2004/0121565 (2004-06-01), Wieczorek et al.
patent: 07-131006 (1995-05-01), None
patent: 10-50988 (1998-02-01), None

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