Semiconductor device having an extrinsic gettering film

Details Semiconductor device having an extrinsic gettering film Semiconductor device having an extrinsic gettering film

1996-10-11

1998-05-26

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

257617, 257913, 438471, 438476, H07L 21322

Patent

active

057570639

ABSTRACT:
A semiconductor device includes a semiconductor substrate having first and second main surfaces and including a denuded zone, in which an oxygen concentration is lower than that in an inner portion of the semiconductor substrate and which does not include a bulk microdefect, and an intrinsic gettering zone, and element region formed on the first surface of the semiconductor substrate, and an extrinsic gettering layer, made of an amorphous semiconductor material which traps a metal impurity, and formed directly on at least a portion of the intrinsic gettering region or the denuded zone entirely or partially thinned of the second main surface of the semiconductor substrate. A method for manufacturing a semiconductor device includes the steps of forming an element region on a first main surface of a semiconductor substrate having first and second main surfaces and having an intrinsic gettering zone, and forming an extrinsic gettering layer, made of an amorphous semiconductor material which traps a metal impurity, directly on at least a portion of the intrinsic gettering region of the second main surface of the semiconductor substrate.

REFERENCES:
patent: 4053335 (1977-10-01), Hu
patent: 4608096 (1986-08-01), Hill
patent: 4716451 (1987-12-01), Hsu et al.
patent: 5327007 (1994-07-01), Imura et al.
patent: 5360748 (1994-11-01), Nadahara et al.
patent: 5397903 (1995-03-01), Hirose

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