Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-07-27

2011-12-20

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

C257S608000, C257SE29068

Reexamination Certificate

active

08080863

ABSTRACT:
A conventional semiconductor device, for example, a lateral PNP transistor has a problem that it is difficult to obtain a desired current-amplification factor while maintaining a breakdown voltage characteristic without increasing the device size. In a semiconductor device, that is a lateral PNP transistor, according to the present invention, an N type epitaxial layer is formed on a P type single crystal silicon substrate. The epitaxial layer is used as a base region. Moreover, molybdenum (Mo) is diffused in the substrate and the epitaxial layer. With this structure, the base current is adjusted, and thereby a desired current-amplification factor (hFE) of the lateral PNP transistor is achieved.

REFERENCES:
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patent: 5610415 (1997-03-01), Schulze
patent: 6239463 (2001-05-01), Williams et al.
patent: 57-112071 (1982-07-01), None
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patent: 04-085934 (1992-03-01), None
patent: 05-144830 (1993-06-01), None
patent: 2004-095781 (2004-03-01), None

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