Semiconductor device having improved electronic isolation

Details Semiconductor device having improved electronic isolation Semiconductor device having improved electronic isolation

1994-03-17

1998-12-01

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

For compound semiconductor

257 40, 257190, 438510, 438518, 438 99, H01L 29167

Patent

active

058443037

ABSTRACT:
A semiconductor device includes a buffer layer of AlGaAs that contains oxygen with a concentration level in the approximate range of 8.times.10.sup.17 cm.sup.-3 to 6.times.10.sup.19 cm.sup.-3, and carbon with a concentration level in the approximate range of 2.times.10.sup.16 cm.sup.-3 to 2.times.10.sup.17 cm.sup.-3. A lattice constant of the AlGaAs buffer layer is larger than a lattice constant of the GaAs substrate so a lattice misfit of the AlGaAs layer with respect to the GaAs substrate is equal to or varies by no more than 2.times.10.sup.5 from a corresponding lattice misfit between an undoped AlGaAs crystal with respect to the GaAs substrate. Oxygen atoms occupy an interstitial site, creating a deep impurity level that suppresses side gate effect.

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