Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – Deep level dopant
Patent
1996-06-20
1997-12-16
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
Deep level dopant
257617, 257913, 437 10, 437 12, H01L 21322, H01L 2138, H01L 2932, H01L 2936
Patent
active
056988915
ABSTRACT:
A semiconductor device includes a semiconductor substrate having first and second main surfaces and including a denuded zone, in which an oxygen concentration is lower than that in an inner portion of the semiconductor substrate and which does not include a bulk microdefect, and an intrinsic gettering zone, an element region formed on the first surface of the semiconductor substrate, and an extrinsic gettering layer, made of an amorphous semiconductor material which traps a metal impurity, and formed directly on at least a portion of the intrinsic gettering region or the denuded zone entirely or partially thinned of the second main surface of the semiconductor substrate. A method for manufacturing a semiconductor device includes the steps of forming an element region on a first main surface of a semiconductor substrate having first and second main surfaces and having an intrinsic gettering zone, and forming an extrinsic gettering layer, made of an amorphous semiconductor material which traps a metal impurity, directly on at least a portion of the intrinsic gettering region of the second main surface of the semiconductor substrate.
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patent: 5397903 (1995-03-01), Hirose
Saito Mami
Tomita Hiroshi
Yamabe Kikuo
Crane Sara W.
Hardy David B.
Kabushiki Kaisha Toshiba
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