Semiconductor device having an isolation region enriched in oxyg

Details Semiconductor device having an isolation region enriched in oxyg Semiconductor device having an isolation region enriched in oxyg

1995-05-24

1996-10-29

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

257609, 257610, 257612, H01L 29207, H01L 29227, H01L 310304

Patent

active

055699537

ABSTRACT:
A method for growing an epitaxial layer of a group III-V compound semiconductor material that contains oxygen comprises the steps of supplying molecules of an organic compound that contains a group V element and oxygen in the molecule, and decomposing the molecules of the organic compound to release the group V element and oxygen.

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Asbeck et al., "GaAs/(Ga,Al) as Heterojunction Bipolar Transistors with Buried Oxygen-Implanted Isolation Layers", IEEE Electron Device Letters, vol. EDL-5, No. 8, Aug., 1984, New York, US, pp. 310-312.
Hida et al. "High-Speed and Large Noise Margin Tolerance E/D Logic Gates with LDD Structure DMT's Fabricated Using Selective RIE Technology", IEEE Transactions on Electron Devices, vol. 36, No. 10, Oct., 1989 New York, US, pp. 2223-2230.
Kastalsky et al., "A Field-Effect Transistor with a Negative Differential Resistance", IEEE Electron Device Letters, vol. EDL-5, No. 2, Feb. 2, 1984, New York, US, pp. 57-60.

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