Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-04-04

2009-02-17

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

Reexamination Certificate

active

07492035

ABSTRACT:
A semiconductor device has a semiconductor substrate and a high-resistance first conductivity type well region disposed on the semiconductor substrate. A low-resistance second conductivity type source region and a low-resistance second conductivity type drain region are formed in the well region. The well region is formed with trenches having convex and concave portions and that are disposed parallel to a source-drain direction of the source and drain regions. A gate insulating film is disposed on surfaces of the convex and concave portions of the trenches. A gate electrode is disposed on the gate insulating film.

REFERENCES:
patent: 5502320 (1996-03-01), Yamada
patent: 2004/0183136 (2004-09-01), Williams et al.

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