Semiconductor device having MOS transistor

Details Semiconductor device having MOS transistor Semiconductor device having MOS transistor

1994-09-22

1996-05-07

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

257344, 257345, 257408, 257655, 257914, H01L 29167, H01L 29207, H01L 29227

Patent

active

055149022

ABSTRACT:
A semiconductor device which can effectively prevent impurity diffusion in heat treatment for electrically activating the impurity, and a manufacturing method thereof are disclosed. In the semiconductor device, a diffusion preventing layer having a depth equal to or greater than a junction depth of source/drain regions is formed along the entire junction region of the source/drain regions. The diffusion preventing layer is formed near the surface at the side of a gate insulation layer of the gate electrode including impurity.

REFERENCES:
patent: 4722913 (1988-02-01), Miller
patent: 4772927 (1988-09-01), Saito et al.
patent: 5180690 (1993-01-01), Czubatyj et al.
patent: 5247198 (1993-09-01), Homma et al.
patent: 5264721 (1993-11-01), Gotou
"Optimization of the Germanium Preamorphization Conditions for Shallow-Junction Formation," Ozturk et al., IEEE Transaction on Electron Devices, vol. 35, No. 5, May 1988, pp. 659-668.

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