LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode,Bipolar transistor structure,With enlarged emitter area

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Circuit arrangement

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Circuit arrangement and integrated circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Constitution of an electrode arrangement in a semiconductor elem

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Electronic switch with a definite breakdown voltage

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Emitter ballast bypass for radio frequency power transistors

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Emitter ballast resistor with enhanced body effect to...

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Feed bus for RF power transistors

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Fully current-balanced bipolar power transistor for integrated c

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Fully walled emitter-base in a bipolar transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

HBT with semiconductor ballasting

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

High frequency bipolar transistor and method of forming the same

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

High frequency noise and impedance matched integrated circuits

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

High frequency transistor with reduced parasitic inductance

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

High frequency transistor with reduced parasitic inductance

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

High power and high temperature semiconductor power devices...

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

High power transistor with contact plugs extended from collector

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Homojunction semiconductor devices with low barrier tunnel...

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

IGBT with monolithic integrated antiparallel diode

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Input protection device