High frequency bipolar transistor and method of forming the same

Details High frequency bipolar transistor and method of forming the same High frequency bipolar transistor and method of forming the same

1997-11-04

1999-10-12

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257587, 257593, 257526, H01L 29732

Patent

active

059659300

ABSTRACT:
A high frequency bipolar transistor (30, 60) having reduced capacitance and inductance is formed over a substrate (61). The substrate (61) is heavily doped to form a low resistance current path. A lightly doped epitaxial layer (62) isolates the substrate (61) from layers which form the transistor. The epitaxial layer (62) is the same conductivity type as the substrate (61). A topside substrate contact (73) couples an emitter of the transistor (60) to the substrate (61). The backside of the substrate (61) is metalized and conductively attached to a leaded flag of a leadframe (51) thereby eliminating wirebond inductance in the emitter of the transistor.

REFERENCES:
patent: 4014718 (1977-03-01), Tomozawa et al.
patent: 5049968 (1991-09-01), Nakagawa et al.
patent: 5218227 (1993-06-01), Kinoshita et al.
patent: 5548155 (1996-08-01), Yoshihara
patent: 5565701 (1996-10-01), Zambrano

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