Emitter ballast bypass for radio frequency power transistors

Details Emitter ballast bypass for radio frequency power transistors Emitter ballast bypass for radio frequency power transistors

1995-02-24

1997-11-04

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257581, 257592, 257578, 257538, H01L 27082, H01L 27102, H01L 2970

Patent

active

056843267

ABSTRACT:
An apparatus and method are provided for bypassing the emitter ballast resistors of a power transistor, thereby increasing transistor gain. In a power transistor of the interdigitated type, bypassing the emitter ballast resistors requires bypassing each individual ballast resistor with a capacitor in parallel. Bypassing is therefore done on the silicon chip. More particularly, in accordance with one embodiment of the invention, an RF power transistor includes a silicon die, an emitter ballast resistor formed on the silicon die, and a bypass capacitor formed on the silicon die and connected in parallel with the emitter ballast resistor. The resistor may be a diffused resistor, and the capacitor may be a metal-on-polysilicon capacitor. In accordance with another embodiment of the invention, a method is provided for increasing the gain of an RF transistor formed on a silicon chip and having an emitter ballast resistor formed on the silicon chip, in which a capacitor is formed on the silicon chip and connected in parallel with the ballast resistor.

REFERENCES:
patent: 3918080 (1975-11-01), Kerr
patent: 4611882 (1986-09-01), Ushida
patent: 4788584 (1988-11-01), Hirano et al.
patent: 4800416 (1989-01-01), Musemeci
patent: 5018000 (1991-05-01), Yamada et al.
patent: 5336632 (1994-08-01), Imamura
patent: 5352911 (1994-10-01), Grossman
patent: 5378922 (1995-01-01), Sovero
patent: 5408124 (1995-04-01), Palara

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