Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Patent
1994-08-03
1996-07-23
Fahmy, Wael M.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
257579, 257587, H01L 27082, H01L 27102, H01L 2970
Patent
active
055392423
ABSTRACT:
An integrated circuit power transistor, comprising an elongate, resistive, base region and an elongate emitter region formed in part of the base region to provide a base-emitter junction. The power transistor also includes a strip-like base connection formed in part of the base region. The base connection extends from a base terminal towards a remote end, and includes a junction-facing edge facing the base-emitter junction. The junction-facing edge is spaced from the base-emitter junction by a distance that decreases towards the remote end of the base connection. This sets the base side of the base-emitter junction to substantially the same voltage at all points along the length of the base-emitter junction despite an ohmic voltage drop in the base connection that increases towards the remote end of the base connection.
Fahmy Wael M.
National Semiconductor Corporation
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