HBT with semiconductor ballasting

Details HBT with semiconductor ballasting HBT with semiconductor ballasting

1992-09-30

1995-01-03

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257197, 257198, 257200, H01L 29161, H01L 2972

Patent

active

053789229

ABSTRACT:
A III-V semiconductor device is provided with a ballasting resistor that may be connected in series with the emitter, collector, or base of an HBT, depending on the function of the device. The semiconductor ballasting resistor is formed in the subcollector epitaxial layer that is in intimate thermal contact with the substrate. The resistor is defined by isolating a rectangular area of the subcollector with ohmic contacts at each end and is fabricated with no processing steps in addition to those required for the HBT. The resistor provides self-limiting current capacity because of its semiconductor nature. Connected in series with the HBT emitter, the semiconductor resistor prevents destruction of the HBT, particularly in multiple cell, high power applications.

REFERENCES:
patent: 3893154 (1975-07-01), Mroczek et al.
patent: 3936863 (1976-02-01), Olmstead
patent: 4266236 (1981-05-01), Ueda
patent: 4706378 (1987-11-01), Havemann
patent: 4794440 (1988-12-01), Capasso et al.
patent: 4979009 (1990-12-01), Kusano et al.
patent: 5001534 (1991-03-01), Lunardi et al.
patent: 5036372 (1991-07-01), Ohishi et al.
patent: 5063426 (1991-11-01), Chandrasekhar et al.

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