Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Patent
1991-07-15
1992-11-24
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
361 56, H01L 2906, H01L 2972, H02H 900
Patent
active
051667649
ABSTRACT:
An integrated circuit has an input protection device including a bipolar transistor to shunt current away from sensitive areas of the circuit during an e.s.d. event. The bipolar transistor includes floating electrodes on the base to define an equipotential base region so that the effective size of the emitter, and hence the currently handling capability of the transistor, is increased.
REFERENCES:
patent: 4720737 (1988-01-01), Shirato
Mitchell Richard J.
Mitel Corporation
Prenty Mark V.
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