Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Reexamination Certificate
2007-06-06
2010-10-05
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
C257SE23151
Reexamination Certificate
active
07808079
ABSTRACT:
A circuit arrangement includes a plurality of type-identical and identically operated active components, or separate sections of an active component, and includes a branched wiring structure for the interconnection of component connections. In each case the wiring end portions lie between a branching point and an input of different components or sections, wherein the wiring end portions are formed with predetermined geometrical asymmetry with respect to one another in such a way that there is an electrical symmetry of the interconnection configuration between all the connected type-identical components or sections. More particularly, the impedance values between the branching point and the different inputs and outputs are substantially identical.
REFERENCES:
patent: 3596203 (1971-07-01), Sakamoto et al.
patent: 5559363 (1996-09-01), Immorlica, Jr.
patent: 5719530 (1998-02-01), Shimura et al.
Asam Michael
Bakalski Winfried
Kitlinski Krzysztof
Zannoth Markus
Eschweiler & Associates LLC
Infineon - Technologies AG
Sengdara Vongsavanh
Tran Minh-Loan T
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