Constitution of an electrode arrangement in a semiconductor elem

Details Constitution of an electrode arrangement in a semiconductor elem Constitution of an electrode arrangement in a semiconductor elem

1994-12-15

1996-09-10

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257734, 257786, H01L 2970

Patent

active

055548814

ABSTRACT:
At least four electrodes are provided on the same surface of a discrete transistor. Among these electrodes, one electrode is set as a base electrode, an electrode neighboring the base electrode in the up-and-down direction is set as an emitter electrode and an electrode neighboring the base electrode in the right-and-left direction is set as a collector electrode. On the same surface, a base electrode is provided at a position which is neither in the up-and-down direction nor in the right-and-left direction with respect to the base electrode. When the discrete transistor having this type of electrode arrangement is mounted on a substrate, one of the base electrodes formed on the substrate is connected to a first wiring, the collector electrode is connected to a second wiring, and the emitter electrode is connected to a third wiring.

REFERENCES:
patent: 5109270 (1992-04-01), Nambu et al.
patent: 5317173 (1994-05-01), Sovero

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