High power and high temperature semiconductor power devices...

Details High power and high temperature semiconductor power devices... High power and high temperature semiconductor power devices...

2011-08-30

2011-08-30

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

C257S197000, C257S565000, C257S341000

Reexamination Certificate

active

08008747

ABSTRACT:
This invention discloses a semiconductor power device disposed on a semiconductor substrate supporting an epitaxial layer as a drift region composed of an epitaxial layer. The semiconductor power device further includes a super-junction structure includes a plurality of doped sidewall columns disposed in a multiple of epitaxial layers. The epitaxial layer have a plurality of trenches opened and filled with the multiple epitaxial layer therein with the doped columns disposed along sidewalls of the trenches disposed in the multiple of epitaxial layers.

REFERENCES:
patent: 6365932 (2002-04-01), Kouno et al.
patent: 6707341 (2004-03-01), Yamamoto et al.
patent: 6946720 (2005-09-01), Beasom
patent: 7212072 (2007-05-01), Esfandiari
patent: 2008/0012645 (2008-01-01), Ichitsubo et al.

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