High power transistor with contact plugs extended from collector

Details High power transistor with contact plugs extended from collector High power transistor with contact plugs extended from collector

1997-02-14

1998-04-14

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257584, 257586, H01L 27082, H01L 27102, H01L 2970

Patent

active

057395780

ABSTRACT:
A high power bipolar transistor comprises stacks of emitter, base, and collector regions and an emitter and a base connection on an obverse surface of a semiconductor substrate, and a via-hole member through the substrate between a selected one of the emitter and the base connections. A ground connection is formed on a reverse surface of the substrate. A high power bipolar transistor comprises a collector connection on a bottom surface of a semiconductor sheet having a level different from the reverse surface and a plurality of contact plugs formed through the semiconductor sheet between the collector connection and the collector regions, respectively. Preferably, the contact plugs are formed simultaneously with the via-hole member.

REFERENCES:
patent: 5332912 (1994-07-01), Nozu et al.
patent: 5485025 (1996-01-01), Chau et al.

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