Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Reexamination Certificate
2005-08-16
2005-08-16
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
C257S586000, C257S593000, C257S666000, C363S056020, C363S132000, C363S141000, C363S150000
Reexamination Certificate
active
06930373
ABSTRACT:
The circuit has a power stage (LE) with heat generating components mounted around at least one component that generates less heat mounted in an inner region. The heat generating components are connected to at least one conducting metal body (K1) that is mounted on a cooling body (KK) in electrically insulated manner to cool the components. The cooling body encloses the inner region.
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Auerswald Gerd
Gross Kurt
Kirchberger Michael
Kulig Stefan
Rappl Hans
Baker & Botts L.L.P.
Nelms David
Nguyen Dao H.
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