Electronic switch with a definite breakdown voltage

Details Electronic switch with a definite breakdown voltage Electronic switch with a definite breakdown voltage

1993-02-26

1994-08-30

Ngo, Ngan Van

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257496, 257600, 257653, 257654, H01L 2972, H01L 2990

Patent

active

053430697

ABSTRACT:
An electronic switch, in particularly a transistor, has at least one barrier layer extending between regions of different doping concentrations within a semiconductor and is characterized in that the barrier layer has at least one voltage limiting zone (Z) having a radius of curvature (R) less than or at most equal to the diffusion depth (x.sub.JB) of the diffused junction.

REFERENCES:
patent: 3758832 (1973-09-01), Platzoder
patent: 3975754 (1976-08-01), Lehmann
patent: 4774560 (1988-09-01), Coe
patent: 4823176 (1989-04-01), Baligr et al.
patent: 5191396 (1993-03-01), Lidon et al.
S. M. Sze, "Physics of Semiconductor Devices", 1981.

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