High frequency transistor with reduced parasitic inductance

Details High frequency transistor with reduced parasitic inductance High frequency transistor with reduced parasitic inductance

1994-07-08

1995-11-07

Mentel, William

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257587, 257666, 257700, H01L 2312, H01L 2350

Patent

active

054650070

ABSTRACT:
A semiconductor device includes a transistor mounted on the top surface of a substrate. A metal sheet is disposed on a metallized electrode on the substrate to which the emitter, for example, of the transistor is electrically connected. The emitter is electrically connected by a thin metal wire to the metal sheet. An MOS capacitor is disposed on the metal sheet, and a plated through-hole beneath the metal sheet connects the metallized electrode directly to a metallized ground electrode disposed on the bottom surface of the substrate.

REFERENCES:
patent: 3916434 (1975-10-01), Garboushian
patent: 3999142 (1976-12-01), Presser et al.
patent: 4168507 (1979-09-01), Yester, Jr.
patent: 4783697 (1988-11-01), Benenti et al.

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