Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Reexamination Certificate
2006-09-26
2006-09-26
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
C257SE29037, C257S341000, C257S143000, C257S149000
Reexamination Certificate
active
07112868
ABSTRACT:
An IGBT with monolithic integrated antiparallel diode has one or more emitter short regions forming the diode cathode in the region of the high-voltage edge. The p-type emitter regions of the IGBT have no emitter shorts. The counterelectrode of the diode exclusively comprises p-type semiconductor wells on the front side of the device. Particularly in applications, such as lamp ballast, in which the diode of the IGBT is firstly forward-biased, hard commutation is not effected and the current reversal takes place relatively slowly. The emitter short regions may be strips or points below the high-voltage edge. The horizontal bulk resistance is increased and the snapback effect is reduced without reducing the robustness in the edge region. In a second embodiment, the IGBT is produced using thin wafer technology and the thickness of the substrate defining the inner zone is less than 200 μm. The thickness of the emitter region or of the emitter regions and short region(s) is less than 1 μm. A transparent emitter is preferable in this case.
REFERENCES:
patent: 4689647 (1987-08-01), Nakagawa et al.
patent: 4893165 (1990-01-01), Miller et al.
patent: 5105244 (1992-04-01), Bauer
patent: 5141889 (1992-08-01), Terry et al.
patent: 5284780 (1994-02-01), Schulze et al.
patent: 5475243 (1995-12-01), Saito
patent: 5702961 (1997-12-01), Park
patent: 6222248 (2001-04-01), Fragapane
patent: 6271545 (2001-08-01), Schulze
patent: 6323509 (2001-11-01), Kusunoki
patent: 2001/0040255 (2001-11-01), Tanaka
patent: 0 330 122 (1989-08-01), None
Hajime Akiyama et al.: “Effects of Shorted Collector on Charateristics of IGBTS”,Proceedings of 1990 International Symposium on Power Semiconductor Devices and ICs, Tokyo, 1990, pp. 131-136.
Griebl Erich
Huesken Holger
Schulze Hans-Joachim
Willmeroth Armin
Greenberg Laurence A.
Infineon - Technologies AG
Landau Matthew C.
Locher Ralph E.
Parker Kenneth
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