Feed bus for RF power transistors

Details Feed bus for RF power transistors Feed bus for RF power transistors

1992-12-22

1994-07-12

Wojciecouwicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257266, 257341, 257773, 257786, 257923, H01L 2972

Patent

active

053291565

ABSTRACT:
The feeds to the emitter, base, and collector of an RF power transistor (source, drain, gate feeds of an RF FET) are configured so that negative mutual coupling therebetween is enhanced and positive mutual coupling therebetween is reduced. The emitter and base feeds include elongated portions which are generally parallel to each other with bonding pads provided on the elongated portions so that emitter and base currents flow in the same direction in the elongated portions and in the same direction as collector currents below. Interdigitated contact fingers extend from the elongated portions and contact the emitter region and the base region, respectively. When positive coupling of collector current and emitter current to the controlling base current is reduced or eliminated, the major thermal imbalance problem of operating RF transistors is also reduced or eliminated. Performance, linearity, efficiency, gain, and ruggedness are all enhanced in devices designed to utilize this invention.

REFERENCES:
patent: 3623218 (1971-11-01), Mitarai et al.

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