High frequency transistor with reduced parasitic inductance

Details High frequency transistor with reduced parasitic inductance High frequency transistor with reduced parasitic inductance

1995-06-06

1997-06-03

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257587, 257666, 257700, H01L 2312, H01L 2350

Patent

active

056357516

ABSTRACT:
A semiconductor device includes a transistor mounted on a chip substrate. A metal sheet is disposed on the metallized electrode to which the base, for example, of the transistor is electrically connected. The base is electrically connected by a wire to the metal sheet. An MOS capacitor is disposed on the metal sheet and a through-hole beneath the metal sheet connects the metallized electrode directly to a metallized ground electrode disposed on the bottom surface of the substrate.

REFERENCES:
patent: 3916434 (1975-10-01), Garboushian
patent: 3999142 (1976-12-01), Presser et al.
patent: 4168507 (1979-09-01), Yester, Jr.
patent: 4783697 (1988-11-01), Benenati et al.

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