LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Process for controlling autodoping during epitaxial silicon depo

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Process for crystal growth of III-V group compound semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...

Process for depositing epitaxial alkaline earth oxide onto a sub

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Process for depositing III-V semiconductor layers on a...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...

Process for deposition of diamondlike, electrically conductive a

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Process for direct deposition of ALD RhO2

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Process for fabricating an article comprising a...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Process for fabricating materials for ferroelectric, high dielec

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter

Process for fabricating structurally robust optical coatings

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Process for formation of silicon carbide film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Process for forming deep level impurity undoped phosphorous cont

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Process for forming deposited film by use of alkyl aluminum hydr

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Process for forming epitaxial BaF.sub.2 on GaAs

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Process for forming epitaxial BaF.sub.2 on GaAs

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Process for forming low defect density, ideal oxygen...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Process for forming silicon doped group III-V semiconductors wit

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Process for growing a carbon film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...

Process for growing a film epitaxially upon a MgO surface

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Process for growing a film epitaxially upon an oxide surface and