Process for crystal growth of III-V group compound semiconductor

Details Process for crystal growth of III-V group compound semiconductor Process for crystal growth of III-V group compound semiconductor

1995-01-05

1997-02-18

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117104, 117954, 437105, C30B 2940

Patent

active

056037643

ABSTRACT:
A process for crystal growth of III-V group compound semiconductor, which comprises pyrolyzing, in a gas phase, a material consisting of an organometallic compound and/or a hydride in the presence of an organic compound containing an oxygen atom-carbon atom direct bond, used as a dopant to grow a III-V group compound semiconductor crystal layer containing at least aluminum, of high electric resistance. Said process can grow a compound semiconductor layer of high electric resistance by the use of a dopant which enables the independent controls of oxygen concentration and aluminum concentration and which has a small effect of oxygen remaining.

REFERENCES:
patent: 4717597 (1988-01-01), Johnson et al.
patent: 5098857 (1992-03-01), Kuech et al.

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