Process for direct deposition of ALD RhO2

Details Process for direct deposition of ALD RhO2 Process for direct deposition of ALD RhO2

2005-04-19

2005-04-19

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S101000, C117S104000, C117S105000

Reexamination Certificate

active

06881260

ABSTRACT:
The present invention provides methods of performing atomic layer deposition to form conductive, oxidation-resistant rhodium oxide films and films comprising metals, such as platinum, alloyed with rhodium oxide. The present invention also provides memory devices and processors comprising films deposited by the above methods.

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