Process for formation of silicon carbide film

Details Process for formation of silicon carbide film Process for formation of silicon carbide film

1993-03-26

1995-02-21

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

118715, 117 88, 117 89, 117935, 437100, C30B 2502

Patent

active

053906268

ABSTRACT:
In a process for the formation of SiC films by a low pressure CVD method using a hot-wall type, a dichlorosilane gas and an acetylene gas are used as a source gas, the flow velocity of the source gases in a reactor is set at not less than 70 cm/second, and the temperature for heating the reactor is set at not more than 1,000.degree. C., whereby SiC films having excellent uniformity in the film thickness and film properties on the surface of one substrate and among different substrates can be produced at a high mass productivity without causing any damage to the reactor from heat during the film formation.

REFERENCES:
patent: 3865647 (1975-02-01), Reuschel
patent: 4623425 (1986-11-01), Suzuki et al.
patent: 4897149 (1990-01-01), Suzuki et al.
patent: 4912063 (1990-03-01), Davis et al.
patent: 5001380 (1991-03-01), Popov et al.
patent: 5005075 (1991-04-01), Kobayashi et al.
patent: 5011549 (1991-04-01), Kong et al.

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