Process for forming deep level impurity undoped phosphorous cont

Details Process for forming deep level impurity undoped phosphorous cont Process for forming deep level impurity undoped phosphorous cont

1997-06-27

2000-02-01

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 93, 117102, 117104, 117954, C30B 2516

Patent

active

060198400

ABSTRACT:
A reduced temperature low pressure metal organic chemical vapor deposition process for the production of semi-insulating deep level impurity undoped Group III-V phosphorous containing epitaxial layers. The present invention achieves production of semi-insulating layers at reduced growth temperatures in the approximate range of 490.degree. C. to 530.degree. C. Semi-insulating resistivities on the order of 10.sup.6 ohm-cm to 10.sup.9 ohm-cm are obtained according to the present process without resort to use of extrinsic dopants such as the transition metals typically used in conventional processes to obtain semi-insulating phosphorous containing layers, and without post processing annealing.

REFERENCES:
patent: 4716130 (1987-12-01), Johnston, Jr. et al.
patent: 5255281 (1993-10-01), Sugano et al.
patent: 5369043 (1994-11-01), Hyuga et al.
patent: 5471948 (1995-12-01), Burroughes et al.
patent: 5508829 (1996-04-01), Freeouf et al.
patent: 5656538 (1997-08-01), Gardner et al.
"InGaP/GaAs Heterojunction Bipolar Transistor Grown on a Semi-Insulating InGaP Buffer Layer", Ahmari et al., IEEE Electron Device Letters, vol. 18, No. 11, Nov. 1997.
"Low-Temperature Growth of High Resistivity GaAs by Photoassisted Metalorganic Chemical Vapor Deposition", Roberts et al., Appl. Phys. Lett. 64 (18), May 2, 1994, pp.2397-2399.
"Semi-Insulating Nature of Gas Source Molecular Beam Epitaxial InGaP Grown at Very Low Temperatures", Look et al., Appl. Phys. Lett. 63 (9), Aug. 30, 1993, pp. 1231-1233.
"High Resistivity LT-In.sub.0.47 GA.sub.0.53 P Grown by Gas Source Molecular Beam Epitaxy", Ramdani et al., Journal of Electronic Materials, vol. 22, No. 12, 1993, pp. 1481-1485.
"New MBE Buffer Used to Eliminate Backgating in GaAs Mesfet's", Smith et al., IEEE Electron Device Letters, vol. 9, No. 2, Feb. 1988, pp. 77-80.
"A Comparison of As and P-based Semiconductors Grown at Low Temperatures by MBE and GSMBE", Maracas et al., Journal of Electronic Materials, vol. 22, No. 12, 1993, pp. 1375-1381.
"Multiple Deep Levels in Metalorganic Vapor Phase Epitaxy GaAs Grown by Controlled Oxygen Incorporation", Huang et al., Appl. Phys. Lett. 65 (5), Aug. 1, 1994, pp. 604-606.
"VPE Growth of Vanadium-Doped High Resistivity GaAs", Terao et al., pp. 54-60.
"Review of Techniques for Epitaxial Growth of High-Resistivity GaAs--Growth Systems, Problems and Substrate Effects", Cox et al., pp. 41-56.
"Cr Redistribution in Epitaxial and Implanted GaAs Layers", Linh et al., pp. 206-213.
"Low Pressure Organometallic Growth of Chromium-Doped GaAs Buffers Layers", Bonnet et al., pp. 68-75.
"Semi-Insulating In.sub.0.49 Ga.sub.0.51 P Grown at Reduced Substrate Temperature by Low-Pressure Metalorganic Chemical Vapor Deposition", Hartmann et al., Appl. Phys. Lett. 70 (14), Apr. 7, 1997, pp. 1822-1825.

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