Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-03-27
1996-12-03
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117954, 117956, C30B 2940
Patent
active
055803822
ABSTRACT:
An process for efficient controlled N-type silicon doping of Group III-V materials. Through the present invention silicon may be introduced into Group III-V materials at incorporation efficiencies in excess of 10.sup.-4. In a preferred embodiment doping with silicon tetrabromide attains incorporation efficiencies of approximately 0.37. Silicon incorporation efficiencies of approximately 1 should be obtained using silicon tetraiodide. The silicon dopant sources of the present invention may be used to accurately selectively produce net electron concentrations varying from approximately 1.times.10.sup.16 to 1.2.times.10.sup.20 cm.sup.-3. Favorable room temperature vapor pressures of the dopants used in accordance with the present invention allow for production of abrupt doping profiles. Additionally, high photoluminescence peak values, and low contact and sheet resistances are obtained through the present invention. The efficient controlled doping of the present invention is 10,000 times more efficient than known silicon tetrachloride dopant techniques and may be used to produce many semiconductor devices.
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Jackson Steven L.
Stillman Gregory E.
Board of Trustees of the University of Illinois
Kunemund Robert
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